Electrothermal RRAM Crossbar Improvement with 3-D CRS and 1D1R-1R1D Architectures

This paper presents one-diode-one resistor-one-resistor-one-diode (1D1R-1R1D) based Resistive Random Access Memory (RRAM) crossbar architecture and introduces the Complementary Resistive Switching (CRS) structure as alternative improved strategies for the electrothermal RRAM integration. Signal integrity issue is mitigated by using the CRS topology. The CRS based RRAM integration as a single memory cross-point cell avoids the need for extra elements (i.e., diodes, transistors...) which in turn facilitates the prototyping process and increases the data stored in the targeted cross-point device. On the other hand, the alternative 1D1R-1R1D, compared to the 1D1R structure provides a new arrangement for diodes and memory cells, which allows resistive switching for the entire crossbar array. The proposed architecture leads to 2x memory density improvement with the same polarization conditions by rectifying the reverse integration of the diodes.